Vassil Palankovski,Rüdiger Quay's Analysis and Simulation of Heterostructure Devices PDF
By Vassil Palankovski,Rüdiger Quay
The subject of this monograph is the actual modeling of heterostructure units. a close dialogue of actual versions and parameters for compound semiconductors is gifted together with the correct elements of recent submicron heterostructure units. greater than 25 simulation examples for various sorts of Si(Ge)-based, GaAs-based, InP-based, and GaN-based heterostructure bipolar transistors (HBTs) and excessive electron mobility transistors (HEMTs) are given compared to experimental information from cutting-edge devices.
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Analysis and Simulation of Heterostructure Devices (Computational Microelectronics) by Vassil Palankovski,Rüdiger Quay